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HIGH-CURRENT COMPLEMENTARY

  SILICON  POWER TRANSISTORS

 ... designed for use in high power amplifier and switching circuit

applications

FEATURES:

 * Continuous Collector Current - lc = 50 A

 * Power Dissipation - Po = 300 W @ Tc = 25oC

 * DC Current Gain - hFE = 15 ~ 60 @ lc = 25 A

ELECTRICAL CHARACTERISTICS ( Tc = 25oC unless othervvise noted )

OFF CHARACTERISTICS

ACTIVE-REGION SAFE OPERATING AREA (SOA)

High Current Capability - IC Continuous = 50 Amperes.

DC Current Gain - hFE = 15-60 @ IC = 25 Adc

Low Collector?Emitter Saturation Voltage - VCE(sat) = 1.0 Vdc (Max) @ IC = 25 Adc

Pb-Free Packages are Available

The Power 50A 80 V Bipolar NPN Transistor is designed for use in high power amplifier and switching circuit applications.

product details:

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2N5686 datasheet

2n5686 transistor

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