Avalanche photodiode

An avalanche photodiode is a highly sensitive semiconductor electronictl23210d

 device that exploits the photoelectric effect to convert light to electricity. APDs can be thought of as[1] photodetectors that provideUPC1498H

 a built-in first stage of gain through avalanche multiplication. From a functional standpoint, they can be[1] regarded as the semiconductor analog to photomultipliers.BA6679FM

 By applying a high reverse bias voltage (typically 100-200 V in silicon), APDs show an internal current gain effect (around 100) due to impact ionization (avalanche effect). However, some siliconBL9148

 APDs employ alternative doping and beveling techniques compared to traditional APDs that allow greater voltage to be applied before breakdown is reached and hence a greater operating gain (> A thousand). In general,NEC2505

 the higher the opposite voltage the higher the obtain. One of many various words and phrases for that APD multiplication element (Meters), a good instructional expression is offered through the system