NPN Transistor 2N5686

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HIGH-CURRENT COMPLEMENTARY

SILICON  POWER TRANSISTORS

designed for use in high power amplifier and switching circuit

applications

FEATURES:

 * Continuous Collector Current - lc = 50 A

 * Power Dissipation - Po = 300 W @ Tc = 25oC

 * DC Current Gain - hFE = 15 ~ 60 @ lc = 25 A

ELECTRICAL CHARACTERISTICS ( Tc = 25oC unless othervvise noted )

OFF CHARACTERISTICS

ACTIVE-REGION SAFE OPERATING AREA (SOA)

High Current Capability - IC Continuous = 50 Amperes.

DC Current Gain - hFE = 15-60 @ IC = 25 Adc

Low Collector?Emitter Saturation Voltage - VCE(sat) = 1.0 Vdc (Max) @ IC = 25 Adc

Pb-Free Packages are Available

The Power 50A 80 V Bipolar NPN Transistor is designed for use in high power amplifier and switching circuit applications.

Name: 2N5686

Material of transistor: Si

Polarity: npn

Maximum collector power dissipation (Pc): 300W

Maximum collector-base voltage (Ucb): 80V

Maximum collector-emitter voltage (Uce): 80V

Maximum emitter-base voltage (Ueb): 5V

Maximum collector current (Ic max): 50A

Maximum junction temperature (Tj): 200°C

Transition frequency (ft): 2MHz

Collector capacitance (Cc), Pf: 1n

Forward current transfer ratio (hFE), min/max: 15/60

Manufacturer of 2N5686 transistor: MOTOROLA

Package of 2N5686 transistor: TO3

Application of 2N5686 transistor: Power, General Purpose